PART |
Description |
Maker |
SLG7NT41502 SLG7NT41502V SLG7NT41502VTR |
CURIE BASED WEARABLE
|
Dialog Semiconductor
|
OV6946 |
Wearable Devices
|
OmniVision Technologies...
|
AN202-1 AN202 |
Technical Consideration for Migrating CS5460-Based Design to CS5460A-Based Design From old datasheet system
|
Cirrus Logic
|
AS6133 |
For PC-9800 (MS-DOS-TM Based), For IBM PC/ATTM (PC DOS-TM Based)
|
NEC[NEC]
|
PN531 |
μC based Transmission module レC based Transmission module Zener Diode; Application: General; Pd (mW): 400; Vz (V): 7.5 to 7.9; Condition Iz at Vz (mA): 5; C (pF) max: -; Condition VR at C (V): ESD (kV) min: -; Package: MHD
|
NXP Semiconductors N.V.
|
HYS64D64020GBDL-8-B HYS64D64020GBDL HYS64D64020GBD |
DDR SDRAM Modules - 512Mb (64Mx64) PC2100 2-bank, FBGA based DDR SDRAM Modules - 512MB (64Mx64) PC2700 2-bank, FBGA based DDR SDRAM Modules - 512MB (64Mx64) PC3200 2-bank, FBGA based 200-Pin Small Outline Dual-In-Line Memory Modules
|
INFINEON[Infineon Technologies AG]
|
IR2010SPBF IR2010STRPBF IR2010PBF |
3 A HALF BRDG BASED MOSFET DRIVER, PDSO16 Floating channel designed for bootstrap operation HIGH AND LOW SIDE DRIVER 3 A HALF BRDG BASED MOSFET DRIVER, PDIP14
|
International Rectifier
|
IXDI630MYI IXDN630MYI IXDN630CI |
30 A BUF OR INV BASED MOSFET DRIVER, PSSO5 ROHS COMPLIANT, TO-263, 5 PIN 30 A BUF OR INV BASED MOSFET DRIVER, SFM5
|
Clare, Inc. CLARE INC
|
PIP3208-A PIP3208-A127 |
2 A BUF OR INV BASED PRPHL DRVR, PSFM5 PLASTIC, TO-220, SOT-263B-01, SEP-5 PowerMOS transistor TOPFET high side switch 2 A BUF OR INV BASED PRPHL DRVR, PSFM5
|
PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
|
HYS64V6422 HYS64V64220GBDL-75-D HYS64V64220GBDL-8- |
512MB PC133 (2-2-2) 2-bank. FBGA based. available 3Q02 12MB的PC133的(2-2-2银行FBGA封装为基础?可Q02 144 pin SO-DIMM SDRAM Modules 144引脚的SO - DIMM内存模块 SDRAM Modules - 512MB PC133 (2-2-2) 2-bank, FBGA based; End-of-Life
|
INFINEON[Infineon Technologies AG]
|
MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184 TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V 16Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V (MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
|
Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
|